论文标题
量子厅边缘条对硅量子井中山谷分裂的影响
Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
论文作者
论文摘要
我们确定限制在低尺寸SI量子井的二维电子中传导带谷的能量分裂。我们通过在各种填充因子上进行量子厅制度中的激活能量测量来探测山谷的分裂依赖对垂直磁场$ b $ $ b $和霍尔密度的依赖。山谷分割水平的移动性差距随$ b $线性增加，并且非常独立于霍尔密度。数据与传输模型一致，在该传输模型中，山谷分裂取决于跨量子厅边缘条的密度$ eb/h $的增量变化，而不是散装密度。基于这些结果，我们估计山谷的分裂随密度的增加，速率为116 $μ$ ev/10 $^{11} $ cm $^{ - 2} $，与近乎完美的量子量井顶接口的理论预测一致。
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.
