论文标题
H掺杂的β-GA2O3中的红色发光
Red Luminescence in H-doped beta-Ga2O3
论文作者
论文摘要
通过化学，电和光学特征技术研究了氢掺入β-GA2O3薄膜中的影响。通过远程血浆掺杂而没有任何结构性改变，可以实现氢融合。但是，X射线光发射揭示了氧化学环境的重大变化。深度分辨的阴极发光（CL）表明，H掺杂GA2O3膜的近表面区域在1.9 eV处表现出独特的红色发光（RL）带。与H相关的RL条带的出现伴随着通过数量级的膜的电导率增强。温度分辨的CL指向形成丰富的H相关供体，其结合能为28 +/- 4 MeV。 RL发射归因于浅供体深对受体对重组，其中受体为VGA-H复合物，而浅供体是间质H。根据我们的实验考虑，VGA-H复合物的结合能与Varley等人的计算结果一致[J. [J。[J.物理学：冷凝。物质，23，334212，2011]。
The effects of hydrogen incorporation into beta-Ga2O3 thin films have been investigated by chemical, electrical and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma doping without any structural alterations of the film; however, X-ray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that the near-surface region of the H-doped Ga2O3 film exhibits a distinct red luminescence (RL) band at 1.9 eV. The emergence of the H-related RL band is accompanied by an enhancement in the electrical conductivity of the film by an order of magnitude. Temperature-resolved CL points to the formation of abundant H-related donors with a binding energy of 28 +/- 4 meV. The RL emission is attributed to shallow donor-deep acceptor pair recombination, where the acceptor is a VGa-H complex and the shallow donor is interstitial H. The binding energy of the VGa-H complex, based on our experimental considerations, is consistent with the computational results by Varley et al [J. Phys.: Condens. Matter, 23, 334212, 2011].
