论文标题

在大部分NB0.25BI2SE3中

Time-reversal invariant and fully gapped unconventional superconducting state in the bulk of the topological Nb0.25Bi2Se3

论文作者

Das, Debarchan, Kobayashi, K., Smylie, M. P., Mielke III, C., Takahashi, T., Willa, K., Yin, J. -X., Welp, U., Hasan, M. Z., Amato, A., Luetkens, H., Guguchia, Z.

论文摘要

最近,NIOBIUM(NB)的拓扑绝缘体BI_2SE_3,其中NB原子的有限磁矩在BI_2SE_3层之间的范Waals间隙中插入,已显示出与T_C = 3 K = 3 K和拓扑表面状态的超导性。在这里,我们报告了MUON自旋旋转实验,以探测有效的磁穿透深度lambda_eff(T)在分层拓扑超导体候选中NB_0.25BI_2SE_3中的温度依赖性。 lambda_(eff)^(-2)(t)在低温下的指数温度依赖性表明,超导转换温度t_c = 2.9 k和差距2delta/k_bt_c = 3.95(19)(19)(19)。我们还揭示了T_C/Lambda_(EFF)^(-2)的比率与非常规超导体的比率相当,后者暗示了一种非常规配对机制。此外,通过敏感的零场MUSR实验,在超导状态下排除了时间逆向对称性破裂。我们希望目前的结果将刺激理论研究,以获得对超导性与NB_0.25BI_2SE_3的超导性与拓扑非平地电子结构之间关系的理解。

Recently, the niobium (Nb)-doped topological insulator Bi_2Se_3, in which the finite magnetic moments of the Nb atoms are intercalated in the van der Waals gap between the Bi_2Se_3 layers, has been shown to exhibit both superconductivity with T_c = 3 K and topological surface states. Here we report on muon spin rotation experiments probing the temperature-dependent of effective magnetic penetration depth Lambda_eff(T) in the layered topological superconductor candidate Nb_0.25Bi_2Se_3. The exponential temperature dependence of lambda_(eff)^(-2)(T) at low temperatures suggests a fully gapped superconducting state in the bulk with the superconducting transition temperature T_c = 2.9 K and the gap to T_c ratio 2Delta/k_BT_c = 3.95(19). We also revealed that the ratio T_c/lambda_(eff)^(-2) is comparable to those of unconventional superconductors, which hints at an unconventional pairing mechanism. Furthermore, time reversal symmetry breaking was excluded in the superconducting state with sensitive zero-field muSR experiments. We hope the present results will stimulate theoretical investigations to obtain a microscopic understanding of the relation between superconductivity and the topologically non-trivial electronic structure of Nb_0.25Bi_2Se_3.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源