论文标题
通过界面的原子尺度调制，增强垂直磁各向异性和薄铁磁性膜中的dzyaloshinskii-moriya相互作用
Enhancement of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in thin ferromagnetic films by atomic-scale modulation of interfaces
论文作者
论文摘要
为了稳定非平凡的自旋纹理，例如，在超薄磁性膜中的天际或手性结构域壁，必须由强大的自由度（IDMI）诱发诸如界面dzyaloshinskii-Moriya互动（IDMI）之类的额外自由度。但是，对于将来的自旋轨道设备实现，需要同时控制IDMI和垂直磁各向异性（PMA）的先进方法。在这里，我们显示了由5D重金属/非金属/非金属/4D（5D）重金属或氧化物界面组成的超薄膜中原子尺度表面调制对磁性特性和IDMI的影响。最大IDMI值对应于铁磁层底部和顶部接口的相关粗糙度。通过在原子量表上通过接口粗糙度工程对PMA和IDMI显着增强的建议方法为开发自旋轨道设备的开发提供了一种强大的工具，并具有其功能的精确可靠的可靠性。
To stabilize the non-trivial spin textures, e.g., skyrmions or chiral domain walls in ultrathin magnetic films, an additional degree of freedom such as the interfacial Dzyaloshinskii-Moriya interaction (IDMI) must be induced by the strong spin-orbit coupling (SOC) of a stacked heavy metal layer. However, advanced approaches to simultaneously control IDMI and perpendicular magnetic anisotropy (PMA) are needed for future spin-orbitronic device implementations. Here, we show an effect of atomic-scale surface modulation on the magnetic properties and IDMI in ultrathin films composed of 5d heavy metal/ferromagnet/4d(5d) heavy metal or oxide interfaces, such as Pt/CoFeSiB/Ru, Pt/CoFeSiB/Ta, and Pt/CoFeSiB/MgO. The maximum IDMI value corresponds to the correlated roughness of the bottom and top interfaces of the ferromagnetic layer. The proposed approach for significant enhancement of PMA and IDMI through the interface roughness engineering at the atomic scale offers a powerful tool for the development of the spin-orbitronic devices with the precise and reliable controllability of their functionality.
