论文标题
纳米结构的金电阻切换膜中电气传导和负温度系数
Anomalous Electrical Conduction and Negative Temperature Coefficient of Resistance in Nanostructured Gold Resistive Switching Films
论文作者
论文摘要
我们报告观察非金属电气传导，电阻开关以及在电气渗透和强耦合方案上的集群组装的纳米结构金膜中的电阻的负温度系数，从房间到低温气温（24k）。膜的结构的特征是非常高的随机定向的结晶纳米域，并由晶界隔开。可以通过考虑空间电荷有限的传导和库仑阻滞现象来解释观察到的行为，从而突出了高密度和晶界对传导电子定位的影响。我们的发现对基于纳米对象的随机组件的一系列电阻切换系统具有影响。
We report on the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in cluster-assembled nanostructured gold films above the electrical percolation and in strong-coupling regime, from room to cryogenic temperatures (24K). The structure of the films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries. The observed behavior can be explained by considering space charge limited conduction and Coulomb blockade phenomena highlighting the influence of the high density of defects and grain boundaries on the localization of conduction electrons. Our findings have implications for a broad class of resistive switching systems based on random assemblies of nanoobjects.
