论文标题
具有电阻RAM的突触的三元神经网络的低功率内存中实施
Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse
论文作者
论文摘要
实施具有较低精度神经网络的系统的设计,具有新兴记忆(例如电阻随机访问记忆(RRAM))是减少人工智能(AI)能源消耗的主要领导。例如,多个作品提出了内存架构来实施低功率二进制神经网络。这些简单的神经网络,即突触权重和神经元激活假设二进制值,确实可以在视力任务上取得最新的性能。在这项工作中,我们重新审视了这些体系结构之一,在这些体系结构中以不同的方式实现了突触以减少位错误,并使用Precharge Sense放大器读取突触权重。基于在混合130 nm CMOS/RRAM芯片和电路模拟上进行的实验测量,我们表明可以使用相同的内存阵列体系结构实现三元重量而不是二进制重量,并且如果感官放大器在近三分方面运行,则该技术尤其适合。我们还基于CIFAR-10图像识别任务基于神经网络模拟,从二进制到三元神经网络会大大提高神经网络的性能。这些结果表明,在低功率制度下操作时,有时可能会重新审视AI电路功能。
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have for example proposed in-memory architectures to implement low power binarized neural networks. These simple neural networks, where synaptic weights and neuronal activations assume binary values, can indeed approach state-of-the-art performance on vision tasks. In this work, we revisit one of these architectures where synapses are implemented in a differential fashion to reduce bit errors, and synaptic weights are read using precharge sense amplifiers. Based on experimental measurements on a hybrid 130 nm CMOS/RRAM chip and on circuit simulation, we show that the same memory array architecture can be used to implement ternary weights instead of binary weights, and that this technique is particularly appropriate if the sense amplifier is operated in near-threshold regime. We also show based on neural network simulation on the CIFAR-10 image recognition task that going from binary to ternary neural networks significantly increases neural network performance. These results highlight that AI circuits function may sometimes be revisited when operated in low power regimes.