在Atlas IBL中的单个事件感到不安的测量

论文标题

在Atlas IBL中的单个事件感到不安的测量

Measurements of Single Event Upset in ATLAS IBL

论文作者

Balbi, G., Barbero, M., Beccherle, R., Bindi, M., Breugnon, P., Butti, P., Cinca, D., Dickinson, J., Ferrere, D., Fougeron, D., Garcia-Sciveres, M., Pascual, J. Garcia, Gaudiello, A., Gemme, C., Giangiacomi, N., Hemperek, T., Jeanty, L., Kepka, O., Kocian, M., Lantzsch, K., Liu, P., Martin, C., Mekkaoui, A., Menouni, M., Potamianos, K., Rozanov, A., Takubo, Y., Wensing, M.

论文摘要

单个事件Upset（SEU）和单个事件瞬变（SET）的影响在Atlas像素系统的最终层的Fe-I4b芯片中进行了研究。 SEU/SET会影响FE-I4B全球寄存器以及单个像素的设置，从而导致占用率损失，低压电流，嘈杂的像素和无声像素。定量数据分析和模拟表明，在内存的负载线上占主导地位。提出了操作问题和缓解技术。

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.

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