论文标题
在la $ _ {1-x} $ _ {1-x} $ _x $ _x $ vo $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $的掺杂和温度依赖性的共振非弹性X射线散射研究
Resonant inelastic x-ray scattering study of doping and temperature dependence of low-energy excitations in La$_{1-x}$Sr$_x$VO$_3$
论文作者
论文摘要
我们提出了一个温度和掺杂的谐振非弹性X射线散射实验，该实验在v l $ _ {2,3} $和l la $ _ $ _ {1-x} $ _x $ _x $ _x $ _x $ _x $ _3 $ for $ x = 0 $ x = 0 $和$ x = 0.1 $中的v l $ _ {2,3} $和o K边缘。该材料是化合物的规范示例，该化合物表现出填充的控制金属 - 绝缘体的跃迁，并在低温下进行轨道顺序和抗铁磁过渡。 v l $ _ {3} $ edge的温度依赖性测量结果揭示了一种in Intra-t $ _ {2G} $激发，该激发的激发率从室温到30 k，以para-和抗Fiferromagnetic相之间的不同速度将其升高到30 K。线形可以使用晶体场理论计算纯粹的局部模型来部分解释。在$ x = 0.1 $时，掺杂显示会影响局部电子结构，主要是在O站点上，这与简单的Mott-Hubbard图片不同意。我们揭示了O K边缘的声子夸隆特征的存在，这证明了频谱的低能部分由声子响应主导。
We present a temperature and doping dependent resonant inelastic X-ray scattering experiment at the V L$_{2,3}$ and O K edges in La$_{1-x}$Sr$_x$VO$_3$ for $x=0$ and $x=0.1$. This material is a canonical example of a compound that exhibits a filling control metal-insulator transition and undergoes orbital ordering and antiferromagnetic transitions at low temperature. Temperature dependent measurements at the V L$_{3}$ edge reveal an intra-t$_{2g}$ excitation that blueshifts by 40 meV from room temperature to 30 K at a rate that differs between the para- and antiferromagnetic phases. The lineshape can be partially explained by a purely local model using crystal field theory calculations. At $x=0.1$ the doping is shown to affect the local electronic structure primarily on the O sites, which is in disagreement with a simple Mott-Hubbard picture. We reveal the presence of phonon overtone features at the O K edge, which evidences that the low energy part of the spectrum is dominated by phonon response.
