论文标题
层厚度对NB $ _3 $ SN膜的结构，形态和超导性特性的影响
Effect of layer thickness on structural, morphological and superconducting properties of Nb$_3$Sn films fabricated by multilayer sequential sputtering
论文作者
论文摘要
可以通过控制SN的原子浓度来合成超导NB3SN膜。 NB和SN薄膜随后进行高温退火的多层顺序溅射被认为是制造NB3SN膜的一种方法，其中沉积膜的SN组成可以通过交替的NB和SN层的厚度来控制。我们报告了NB3SN膜的结构，形态和超导性能，该薄膜由NB和SN膜在蓝宝石底物上的多层顺序溅射制成，然后在950°C退火3小时。我们研究了NB和SN层厚度和NB：SN比对NB3SN膜的性质的影响。通过X射线衍射（XRD），扫描电子显微镜（SEM），原子力显微镜（AFM）和能量分散X射线光谱（EDS）来表征晶体结构，表面形态，表面形态和膜组成。结果表明，由于退火过程中的蒸发而导致的SN损失。制造了高达17.93 K的临界温度的超导NB3SN膜。
Superconducting Nb3Sn films can be synthesized by controlling the atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn films, where the Sn composition of the deposited films can be controlled by the thickness of alternating Nb and Sn layers. We report on the structural, morphological and superconducting properties of Nb3Sn films fabricated by multilayer sequential sputtering of Nb and Sn films on sapphire substrates followed by annealing at 950 °C for 3 h. We have investigated the effect of Nb and Sn layer thickness and Nb:Sn ratio on the properties of the Nb3Sn films. The crystal structure, surface morphology, surface topography, and film composition were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray spectroscopy (EDS). The results showed Sn loss from the surface due to evaporation during annealing. Superconducting Nb3Sn films of critical temperature up to 17.93 K were fabricated.
