论文标题
niobium dayem纳米桥约瑟夫森现场效应晶体管
Niobium Dayem nano-bridge Josephson field-effect transistors
论文作者
论文摘要
我们报告了基于NB的\ TextIt {All-Metallic}盖好的Dayem纳米桥现场效应晶体管（NB-FETS）的首次实现。这些Josephson设备的运行速度最高为$ \ sim 3 $ k，并且由于使用控制门电压的应用，可以完全抑制超电流。动力电感和跨导率对栅极电压的依赖性有望与迄今已实现的金属约瑟夫森晶体管相当，并预测基于NB-FET的超导数字逻辑的实现。最后，我们通过显示实现全金属栅极可调\ emph {Half-Wave}整流器的实现的实现的实现，用于超导电子设备或用于光子检测应用。
We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors, and let to foresee the implementation of a superconducting digital logic based on Nb-FETs. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable \emph{half-wave} rectifier to be used either for superconducting electronics or for photon detection applications.
