论文标题
用于高速公性二维电子系统的掺杂孔结构的工作原理
Working principles of doping-well structures for high-mobility two-dimensional electron systems
论文作者
论文摘要
抑制电子散射对于实现高弹性的二维电子系统（2DES）至关重要，这些电子系统（2DES）足以探测外来相互作用驱动的现象。在异质结构中，使用调制掺杂是普遍的实践，在该掺杂中，离子化的掺杂剂与2DES通道物理分离。掺杂孔结构通过为2DE附近的所有类型的带电杂质提供额外的筛选来增强掺杂掺杂，这对于获得创纪录的样本是必不可少的。尽管它在超高动力2DESS的设计方面盛行，但尚未报道掺杂孔结构的工作原理。在这里，我们详细介绍了电子从掺杂井到2DE的机制，重点是通过分子束外尾生长的GAAS/ALGAAS样品。基于这种理解，我们证明了如何将掺杂孔中的结构参数变化以调整2DES的性质。
Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultra-high-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.
