论文标题
高速和低功率旋转轨道磁性磁性随机记忆的材料要求
Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory
论文作者
论文摘要
由于下一代低功率和高速芯片上缓存内存应用程序，自旋 - 轨道扭转磁随机访问记忆（SOT-MRAM）正在引起人们的兴趣，因此分析获得子NS所需的磁性隧道连接（MTJ）属性至关重要，并且与CMOS访问晶体的集成时，需要进行磁性隧道连接（MTJ）属性。在本文中，面向内型Y SOT-MRAM的2T-1MTJ细胞级建模框架表明，优选高自旋霍尔电导率和中等SOT材料板电阻。我们基于文献中的各种SOT材料（包括重金属，拓扑绝缘子和半法）基于Y型SOT细胞的能量和速度性能。然后，我们对SOT材料PT，Beta-W和Bixse（1-X）进行详细的基准测试，其厚度和电阻率不同。我们进一步讨论如何扩展我们的2T-1MTJ模型，以分析SOT-MRAM的其他变化，包括垂直（Z型）和X型SOT-MRAM，两端SOT-MRAM，以及自旋转移 - 转移 - TORQUE（STT）和电压控制的磁性磁反应（VCMA） - Anisotropy（VCMA） - Ass-Assssss Sots Sots Sot-Mram sot-Mram sot-Mram-Mram sot-Mram-MRRAM。这项工作将为未来的SOT-MRAM材料，设备和电路研究提供必要的准则。
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to achieve sub-ns, and ~fJ write operation when integrated with CMOS access transistors. In this paper, a 2T-1MTJ cell-level modeling framework for in-plane type Y SOT-MRAM suggests that high spin Hall conductivity and moderate SOT material sheet resistance are preferred. We benchmark write energy and speed performances of type Y SOT cells based on various SOT materials experimentally reported in the literature, including heavy metals, topological insulators and semimetals. We then carry out detailed benchmarking of SOT material Pt, beta-W, and BixSe(1-x) with different thickness and resistivity. We further discuss how our 2T-1MTJ model can be expanded to analyze other variations of SOT-MRAM, including perpendicular (type Z) and type X SOT-MRAM, two-terminal SOT-MRAM, as well as spin-transfer-torque (STT) and voltage-controlled magnetic anisotropy (VCMA)-assisted SOT-MRAM. This work will provide essential guidelines for SOT-MRAM materials, devices, and circuits research in the future.
