论文标题
用弯曲硅单晶进行电子通道实验 - 基于改良的Fokker-Planck方程的重新分析
Electron channeling experiments with bent silicon single crystals -- a reanalysis based on a modified Fokker-Planck equation
论文作者
论文摘要
在60 $ $ $ m厚的硅单晶中，在（111）的（111）通道上观察到了令人惊讶的小型切道长度，弯曲半径为0.15 m。实验是在设施的3.35至14 GEV之间进行的，用于晚期加速器实验测试（美国SLAC的Facet）。本文中显示，小型的切换长度可以用改良的Fokker-Planck方程来很好地复制，用于平面晶体，其中引入了晶体弯曲。对此结果实验的鼓励，已重新考虑，这些实验是在Mainz Microtron Mami上进行的，该MAMI具有（110）硅波动器晶体。用改良的Fokker-Planck方程获得的结果表明，观察到的相当低的悬峰强度来自未驱动器弯曲段中的Electron的强烈降低的去通道长度。根据修改的Fokker-Planck方程得出的缩放定律，揭示了基于电子的起伏器的优化参数，可能是$ x $ - 和$γ$ -Ray -Ray区域中的辐射源。
A surprising small dechanneling length was observed at (111) channeling of ultrarelativistic electrons in a 60 $μ$m thick silicon single crystal with a bending radius of 0.15 m. The experiments were conducted at beam energies between 3.35 and 14 GeV at the Facility for Advanced Accelerator Experimental Tests (FACET at SLAC, USA). It is shown in this paper that the small dechanneling lengths can well be reproduced with a modified Fokker-Planck equation for plane crystals in which a crystal bending has been heuristically introduced. Encouraged by this result experiments have been reconsidered which were performed at the Mainz Microtron MAMI with (110) silicon undulator crystals. The results obtained with the modified Fokker-Planck equation suggest that the observed rather low undulator peak intensity originates from the strongly reduced dechanneling length of electrons in the bent sections of the undulator. A scaling law derived on the basis of the modified Fokker-Planck equation reveals optimized parameters of electron based undulators as possible radiation sources in the $X$- and $γ$-ray region.
