论文标题
双HGTE量子井中的二维拓扑绝缘体状态
Two-dimensional topological insulator state in double HgTe quantum well
论文作者
论文摘要
先前在基于倒下的子带顺序的单个基于HGTE的量子井中已经观察到二维拓扑绝缘体相。在双量子井（DQW）中，两层之间的耦合引入了额外的自由度，从而导致了丰富的相图。通过研究基于HGTE的DQW中的局部和非局部电阻，我们观察到无间隙的半准相和拓扑绝缘体阶段，具体取决于样品的参数，并且根据理论预测。我们的工作确立了DQW是实现多层拓扑绝缘子的有前途的平台。
The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topological insulator phase, depending on parameters of the samples and according to theoretical predictions. Our work establishes the DQWs as a promising platform for realization of multilayer topological insulators.
