论文标题
倾斜黑色 - si：〜0.45次波长针头的形式折射。
Tilted black-Si: ~0.45 form-birefringence from sub-wavelength needles
论文作者
论文摘要
硅（SI）（称为黑硅（B-SI））产生的自组织的圆锥针形成了形式的表面表面纹理，当以$θ_i<50-70-70^\ Circ的角度蚀刻si的蚀刻为si时（si表面和垂直等离子e-field）。 15 〜min蚀刻后，在形式的生物区域中的针头的高度为$ d \ sim 200 $ nm，并具有使用polariscopy的特征的光性延迟/双向宽度/双折射的100 $ $ m宽度。 B-SI针的高度与可见光谱范围的Si $ \simλ/4 $的皮肤深度密切相对应。提出了带电压控制的液体结晶器的反射型极层，以直接测量带有倾斜B-SI针的区域的延迟$Δn\ times d/λ\约0.15 $。获得了$ΔN= -0.45 $ $λ= 400-700 $ 〜nm光谱窗口的量化形式的双折射。在可见波长处的$Δn$的这种高值只能在最双折射的方解石或钡硼酸钡以及液晶中观察到。还证明了B-SI在Ni-Shim中的复制，也证明了B-Si Nanopattern将B-Si Nanopattern印在其他材料中。
The self-organised conical needles produced by plasma etching of silicon (Si), known as black silicon (b-Si), create a form-birefringent surface texture when etching of Si orientated at angles of $θ_i < 50 - 70^\circ$ (angle between the Si surface and vertical plasma E-field). The height of the needles in the form-birefringent region following 15~min etching was $d\sim 200$ nm and had a 100 $μ$m width of the optical retardance/birefringence, characterised using polariscopy. The height of the b-Si needles corresponds closely to the skin-depth of Si $\simλ/4$ for the visible spectral range. Reflection-type polariscope with a voltage-controlled liquid-crystal retarder is proposed to directly measure the retardance $Δn\times d/λ\approx 0.15$ of the region with tilted b-Si needles. The quantified form birefringence of $Δn = - 0.45$ over $λ= 400-700$~nm spectral window was obtained. Such high values of $Δn$ at visible wavelengths can only be observed in the most birefringence calcite or barium borate as well as in liquid crystals. The replication of b-Si into Ni-shim with high fidelity was also demonstrated and can be used for imprinting of the b-Si nanopattern into other materials.
