论文标题

稀释金属bi $ _2 $ o $ _2 $ se中的t-square电阻率

T-square resistivity without Umklapp scattering in dilute metallic Bi$_2$O$_2$Se

论文作者

Wang, Jialu, Wu, Jing, Wang, Tao, Xu, Zhuokai, Wu, Jifeng, Hu, Wanghua, Ren, Zhi, Liu, Shi, Behnia, Kamran, Lin, Xiao

论文摘要

费米液体(FLS)的电阻率显示出二次温度($ t $),因为电子电子(E-E)散射。为了使电流电流衰减,有两种已知的机制:频段散射(由Baber确定)和Umklapp事件。然而,发现在没有这两种机制中的任何一种的情况下,稀释金属锶钛酸(Sto)显示出$ t^2 $电阻率。软声子的存在及其作为散射中心的可能作用引起了人们的怀疑,即Sto中的$ t $ -Square电阻率不是由于E-E散射。在这里,我们介绍了Bi $ _2 $ o $ _2 $ SE的情况,这是一种带有硬声子的分层半导体,它在掺杂时变成了带有小的单组分费米表面的稀有金属。它显示出$ T $ -Square电阻率,远低于不可想象的umklapp和带间散射的退化温度。我们观察到$ t^2 $电阻率的预成分和费米能量之间的普遍缩放,这是稀释金属的Kadowaki-Woods图的扩展。我们的结果意味着缺乏Fermi液体中E-E驱动$ t $ -Square电阻率的无处不在的理论基础。

The electrical resistivity of Fermi liquids (FLs) displays a quadratic temperature ($T$) dependence because of electron-electron (e-e) scattering. For such collisions to decay the charge current, there are two known mechanisms: inter-band scattering (identified by Baber) and Umklapp events. However, dilute metallic strontium titanate (STO) was found to display $T^2$ resistivity in absence of either of these two mechanisms. The presence of soft phonons and their possible role as scattering centers raised the suspicion that $T$-square resistivity in STO is not due to e-e scattering. Here, we present the case of Bi$_2$O$_2$Se, a layered semiconductor with hard phonons, which becomes a dilute metal with a small single-component Fermi surface upon doping. It displays $T$-square resistivity well below the degeneracy temperature where neither Umklapp nor interband scattering is conceivable. We observe a universal scaling between the prefactor of $T^2$ resistivity and the Fermi energy, which is an extension of the Kadowaki-Woods plot to dilute metals. Our results imply the absence of a satisfactory theoretical basis for the ubiquity of e-e driven $T$-square resistivity in Fermi liquids.

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