论文标题
氮气离子
Nitrogen magneto-ionics
论文作者
论文摘要
到目前为止，磁离子学被理解为电压驱动的磁性材料传输，主要依赖于氧离子/空位的受控迁移，并且在较小程度上是锂和氢。在这里，我们通过单个CON膜的电解质门控（没有离子 - 粘膜层）来证明有效的，室温，电压驱动的氮转运（即，氮气离子电源）。将CON中的氮磁离子与CO3O4中的氧磁离子学进行了比较，这两个层都显示出纳米晶体中心的脸部以面式 - 脉冲结构和可逆的电压驱动的驱动电压驱动的On-Off On-Offermagnetism。与氧气相反，氮的运输均匀地发生了平面波的迁移，而无需扩散通道的辅助。氮气离子学需要较低的阈值电压，并且表现出提高的速率和可环性。这是由于与氧相比，离子扩散的活化能和氮的电负性较低。这些结果吸引了在需要耐力和中等运行速度（例如脑启发的计算）的应用中，在氮化物半导体设备中使用磁性离子学。
So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient, room-temperature, voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a single CoN film (without an ion-reservoir layer). Nitrogen magneto-ionics in CoN is compared to oxygen magneto-ionics in Co3O4, both layers showing a nanocrystalline face-centered-cubic structure and reversible voltage-driven ON-OFF ferromagnetism. In contrast to oxygen, nitrogen transport occurs uniformly creating a plane-wave-like migration front, without assistance of diffusion channels. Nitrogen magneto-ionics requires lower threshold voltages and exhibits enhanced rates and cyclability. This is due to the lower activation energy for ion diffusion and the lower electronegativity of nitrogen compared to oxygen. These results are appealing for the use of magneto-ionics in nitride semiconductor devices, in applications requiring endurance and moderate speeds of operation, such as brain-inspired computing.
