论文标题

概率的回忆网络:将主方程应用于二进制重新拉姆细胞网络的应用

Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells

论文作者

Dowling, V. J., Slipko, V. A., Pershin, Y. V.

论文摘要

近年来,使用非确定性电路组件的可能性已引起了很大的关注。他们的电路的建模和模拟需要新颖的方法,因为目前无法精确预测在任意时刻的电路状态。通常,这些电路应以概率来描述,应平均计算电路变量,并应使用相关函数来探索变量之间的相互关系。在本文中,我们首次使用主方程来分析由概率二进制备忘录组成的网络。发现了连接在串行和并行的相同备用器的情况下的主方程的分析解。我们的分析结果补充了数值模拟的结果,这些模拟将我们的发现扩展到相同的回忆录的情况下。本文提出的方法促进了概率/随机电子电路的发展,并推进了其现实世界中的应用。

The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be precisely predicted. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on average, and correlation functions should be used to explore interrelations among the variables. In this paper, we use, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors. Analytical solutions of the master equation for the case of identical memristors connected in-series and in-parallel are found. Our analytical results are supplemented by results of numerical simulations that extend our findings beyond the case of identical memristors. The approach proposed in this paper facilitates the development of probabilistic/stochastic electronic circuits and advance their real-world applications.

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