论文标题
perovskite薄膜合金basn $ _ {1-x} $ pb $ _x $ o $ $ _3 $
Signature of band inversion in the perovskite thin-film alloys BaSn$_{1-x}$Pb$_x$O$_3$
论文作者
论文摘要
含有重B站点元件的钙钛矿氧化物Abo $ _3 $是一类候选材料，可容纳具有较大自旋轨道相互作用的拓扑金属。与频带绝缘子Basno $ _3 $相反，半学Bapbo $ _3 $被认为是倒置带结构的典型示例，其传导带主要由O-2P轨道组成。在这项研究中，我们通过Basn $ _ {1-x} $ pb $ _x $ o $ $ _3 $胶片中的系统结构，光学和传输测量来体现带隙修改。在$ x $ = 0.9处的电导率的突然抑制和弱抗静电效应的增强表明，电子结构中存在一个单数点作为频带反转的签名。我们的发现提供了一个有趣的平台，可以根据带隙工程组合钙钛矿氧化物中的拓扑方面和电子相关性。
Perovskite oxides ABO$_3$ containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO$_3$, the semimetal BaPbO$_3$ is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O-2p orbital. In this study, we exemplify a band-gap modification by systematic structural, optical, and transport measurements in BaSn$_{1-x}$Pb$_x$O$_3$ films. A sudden suppression of the conductivity and an enhancement of the weak antilocalization effect at $x$ = 0.9 indicate the presence of a singular point in the electronic structure as a signature of the band inversion. Our findings provide an intriguing platform for combining topological aspects and electron correlation in perovskite oxides based on band-gap engineering.
