论文标题
基于Eleptro Fatig的基于SRTIO3的连接的极性整流效应
Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions
论文作者
论文摘要
整流的半导体连接对电子设备至关重要。他们通过允许单向电荷流将交替的电流转换为直接的电流。与行程电子的电流流整流相比，首先证明了基于TI/疲劳Srtio3（FSTO）Schottky交界处的局部氧空位（OVS）的极性整流。带有OVS的FSTO是由电降解过程产生的。 FSTO中局部OV和行程电子的不同移动性在外部和内置电场的共同体下在连接处的界面上产生单向电动极化。此外，FSTO显示位于副层和铁电阶段之间的弗洛德电态。前弗洛电状态具有三个子状态，可以轻松地通过外部电场将其驱动到铁电状态。这些观察结果为潜在的极性设备打开了机会，并可能支持许多有用的极性触发的电子现象。
Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electro-degradation process. The different movability of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.
