论文标题
inas纳米线上的外延pb
Epitaxial Pb on InAs nanowires
论文作者
论文摘要
半导体 - 渗透导体杂种被广泛用于实现复杂的量子现象，例如拓扑超导性和与库珀对结合的旋转。在高磁场处访问异国情调，并升高最先进的工作温度，需要新的，外上的匹配的半导体 - 驱动器材料。面临的挑战是为具有所需固有特性的材料之间的异质结构形成产生有利的条件。在这里，我们利用了对金属 - 体积导体生长的知识，从而在整个纳米线沿着外延匹配，单晶，原子较平坦的PB膜开发INAS纳米线。这些高度有序的异质结构的临界温度为7 K，超导间隙为1.25 MeV，在8.5 T下保持困难，从而使可用的参数空间增加了一倍以上。此外，INAS/PB Island Devics展示了从库珀对到单电子充电的磁场驱动的过渡。用于拓扑量子计算的先决条件。引入半导体PB混合动力车可能会访问一系列量子系统的全新制度。
Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable conditions for heterostructure formation between materials with the desired inherent properties. Here, we harness increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single crystal, atomically flat Pb films along the entire nanowire. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, thereby more than doubling the available parameter space. Additionally, InAs/Pb island devics exhibit magnetic field-driven transitions from Cooper pair to single electron charging; a pre-requisite for use in topological quantum computation. Introducing semiconductor-Pb hybrids potentially enables access to entirely new regimes for an array of quantum systems.
