论文标题
III单钙化物MX（m = ga，in and x = s，se，te）单层中的自旋和RashBA性质的应变工程
Strain Engineering of Spin and Rashba properties in Group-III Monochalcogenide MX (M=Ga, In and X=S, Se, Te) Monolayer
论文作者
论文摘要
在本文中，研究了在应变存在下单层MX（M = GA，IN和X = S，SE，TE）的自旋性能。密度功能理论用于研究自旋特性。应变变化因自旋轨道耦合而引起的带隙的修饰，结果表明自旋轨道耦合在压缩方案中具有更高的作用。同样，比较六种材料中相对于应变的传导和价带中的自旋分裂。传导带最小（CBM）的位置施加了一种自旋特性。这些带有镜子对称性的材料可以显示RASHBA效应，而M Valley位于CBM。应变调节三个山谷中的传导带（K，M和$γ$谷）中的最小值，并确定每种材料的旋转效果（旋转分裂，rashba分裂或没有旋转分裂）的旋转效果。最后，探索了Rashba参数与原子质量之间的关系，并观察到原子质量与Rashba系数之间存在线性相关性。
In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. The strain changes modification of bandgap due to spin-orbit coupling, the results indicate the spin-orbit coupling has a higher effect in the compressive regime. Also, spin splitting in the conduction and valence bands respect to strain are compared for six materials. The location of conduction band minimum (CBM) imposed a type of spin properties. These materials with mirror symmetry can display the Rashba effect while M valley is located at CBM. Strain tunes the conduction band minimum in three valleys (K, M and $Γ$ valleys) and determines which spin effect (spin splitting, Rashba splitting or no spin splitting) has occurred in each strain for every material. Lastly, the relation between the Rashba parameter and the atomic mass is explored and it is observed that there is a linear correlation between atomic mass and Rashba coefficient.
