论文标题
由Rashba分裂的laalo3/gdtio3/srtio3驱动的栅极调节的异常大厅效应
Gate-tuned Anomalous Hall Effect Driven by Rashba Splitting in Intermixed LaAlO3/GdTiO3/SrTiO3
论文作者
论文摘要
在确定基于SRTIO3的氧化物异质结构界面上形成的二维电子系统的性能和行为时，异常的大厅效应（AHE）是一个重要数量。 AHE的发生通常被解释为铁磁性的签名，但是越来越清楚的是，Paramagnets也可能有助于AHE。我们通过在低于10 k的温度下测量磁离子的影响来研究磁离子的影响。我们发现，作为栅极电压的函数，该系统经历了Lifshitz的过渡，而同时观察到AHE的发作。但是，我们没有观察到铁磁性的明显迹象。我们认为AHE是由于Lifshitz过渡时Rashba自旋轨道耦合的变化所致，并得出结论，在低温下易于极化和高磁性FILD会导致AHE的存在，这在提取载体密度和移动性时需要考虑到AHE的存在。
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO3/GdTiO3/SrTiO3 at temperatures below 10 K. We find that, as function of gate voltage, the system undergoes a Lifshitz transition, while at the same time an onset of AHE is observed. However, we do not observe clear signs of ferromagnetism. We argue the AHE to be due to the change in Rashba spin-orbit coupling at the Lifshitz transition and conclude that also paramagnetic moments which are easily polarizable at low temperatures and high magnetic filds lead to the presence of AHE, which needs to be taken into account when extracting carrier densities and mobilities.
