论文标题
对半导体异质结构的原子级见解：从界面的实验三维分析到界面粗糙度散射的广义理论
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
论文作者
论文摘要
我们开发了一种通用理论，用于由电荷载体上的界面粗糙度产生的散射过程，并且适用于任何半导体异质结构。通过将我们的实验见解用于通过Atom探针层析成像获得的GE/GESI杂词界获得的三维原子景观，我们已经能够定义与散射潜力相关的完整界面参数集，包括在真实差异差异内部内部和轴向相关性。我们的实验发现表明，界面粗糙度沿界面的生长方向有部分连贯性。我们表明，当考虑以有限界面宽度为特征的异性空间时，必须包括以前被理论模型忽略的此功能。
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration.
