论文标题
Kagome硅：一种新型的外来形式的二维外延硅
Kagome silicene: a novel exotic form of two-dimensional epitaxial silicon
论文作者
论文摘要
自从发现石墨烯以来，为寻找新颖的二维（2D）材料而做出了密集的努力。将材料维度降低到最终薄度是一条公开新物理现象的有前途的途径，并有可能改善设备的性能。在最近的2D材料中，石墨烯的类似物，IV组元素因其意外且可调的物理特性引起了很多关注。根据生长条件和底物，可以形成硅，德国烯和Stanene的几种结构。在这里，我们报告了铝在铝（111）底物上的硅晶格的合成。我们通过扫描隧道显微镜（STM）观测值，高分辨率核心水平（CL）和角度分辨光电子光谱（ARPES）测量以及密度官能理论计算，提供了这种异国情调的2D SI同素异形。
Since the discovery of graphene, intensive efforts have been made in search of novel two-dimensional (2D) materials. Decreasing the materials dimensionality to their ultimate thinness is a promising route to unveil new physical phenomena, and potentially improve the performance of devices. Among recent 2D materials, analogs of graphene, the group IV elements have attracted much attention for their unexpected and tunable physical properties. Depending on the growth conditions and substrates, several structures of silicene, germanene, and stanene can be formed. Here, we report the synthesis of a Kagome lattice of silicene on aluminum (111) substrates. We provide evidence of such an exotic 2D Si allotrope through scanning tunneling microscopy (STM) observations, high-resolution core-level (CL) and angle-resolved photoelectron spectroscopy (ARPES) measurements, along with Density Functional Theory calculations.
