论文标题
硅中的供体核自旋速度的快速抗噪声控制
Fast noise-resistant control of donor nuclear spin qubits in silicon
论文作者
论文摘要
高度的可控性和较长的相干时间使同位素纯化的硅在同位素纯化的硅中的核自旋成为量子位的有前途的候选者。但是，对于这些系统，长距离耦合和快速，强大的大门仍然是出色的挑战。在这里，按照最近通过偶极 - 偶极相互作用进行长距离耦合的建议，我们提出了一种简单的方法，可以在没有电荷噪声的情况下实现快速，高效率的任意单一和双Quibent。此外，我们提供了一种方法，使单量门门在$ 10^{ - 3} $的误差范围内稳健到中等水平的充电噪声。
A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates remain outstanding challenges for these systems. Here, following recent proposals for long-distance coupling via dipole-dipole interactions, we present a simple method to implement fast, high-fidelity arbitrary single- and two-qubit gates in the absence of charge noise. Moreover, we provide a method to make the single-qubit gates robust to moderate levels of charge noise to well within an error bound of $10^{-3}$.
