论文标题
由于$γ$ -ptbi $ _2 $的开放轨道而引起的巨大线性磁化
Huge linear magnetoresistance due to open orbits in $γ$-PtBi$_2$
论文作者
论文摘要
某些单晶材料呈现电阻率，在零磁场处的室温和低温之间降低了良好的金属，并通过磁场的应用在低温下切换到几乎半导体的行为。通常，这伴随着一种巨大且不饱和的线性磁磁性，这仍然很难解释。在这里，我们介绍了单晶$γ$ -ptbi $ _2 $中磁倍率的系统研究。我们观察到，磁场和晶体$ c $轴之间的角度从根本上改变了磁性，从饱和到不饱和的磁场依赖性。在两者之间，有一个特定的角度，其中磁倍率与磁场完全线性。我们表明，不饱和磁阻的线性依赖性是由于$γ$ -ptbi $ _2 $的费米表面中的开放轨道形成。
Some single-crystalline materials present an electrical resistivity which decreases between room temperature and low temperatures at zero magnetic field as in a good metal and switches to a nearly semiconductinglike behavior at low temperatures with the application of a magnetic field. Often, this is accompanied by a huge and nonsaturating linear magnetoresistance which remains difficult to explain. Here we present a systematic study of the magnetoresistance in single-crystal $γ$-PtBi$_2$. We observe that the angle between the magnetic field and the crystalline $c$ axis fundamentally changes the magnetoresistance, going from a saturating to a nonsaturating magnetic field dependence. In between, there is one specific angle where the magnetoresistance is perfectly linear with the magnetic field. We show that the linear dependence of the nonsaturating magnetoresistance is due to the formation of open orbits in the Fermi surface of $γ$-PtBi$_2$.
