论文标题
Schottky屏障高度工程以$β$ -GA $ _2 $ o $ _3 $使用Sio $ _2 $ Interlayer介电介质
Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric
论文作者
论文摘要
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky barrier diodes were fabricated on bulk n-type doped $β$-Ga$_2$O$_3$ single crystal substrates along the (010), (-201) and (100) orientations and were characterized by room temperature current-voltage (I-V) and电容 - 电压（C-V）测量值。与各自的MS对应物相比，PT MIS Diodes沿（010）和（-201）方向的SBH分别显示为0.53 eV和0.37 EV的增量。使用PT金属，在（010）面向的MIS SBD上实现了1.81 eV的最高SBH。以（100）为导向的底物上的MIS SBD在SBH中表现出戏剧性的增量（$> $ 1.5 $ \ times $），并减少了反向泄漏电流。使用薄电介质中间层可以是一种有效的实验方法，用于调节金属/ga $ _2 $ o $ $ _3 $连接的SBH。
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky barrier diodes were fabricated on bulk n-type doped $β$-Ga$_2$O$_3$ single crystal substrates along the (010), (-201) and (100) orientations and were characterized by room temperature current-voltage (I-V) and capacitance-voltage (C-V) measurements. Pt MIS diodes exhibited 0.53 eV and 0.37 eV increment in SBH along the (010) and (-201) orientations respectively as compared to their respective MS counterparts. The highest SBH of 1.81 eV was achieved on the (010)-oriented MIS SBD using Pt metal. The MIS SBDs on (100)-oriented substrates exhibited a dramatic increment ($>$1.5$\times$) in SBH as well as reduction in reverse leakage current. The use of thin dielectric interlayers can be an efficient experimental method to modulate SBH of metal/Ga$_2$O$_3$ junctions.
