论文标题

域壁诱导抗铁磁拓扑绝缘子中的自旋偏振平坦带

Domain wall induced spin-polarized flat bands in antiferromagnetic topological insulators

论文作者

Petrov, Evgeniy K., Men'shov, Vladimir N., Rusinov, Igor P., Hoffmann, Martin, Ernst, Arthur, Otrokov, Mikhail M., Dugaev, Vitalii K., Menshchikova, Tatiana V., Chulkov, Evgueni V.

论文摘要

费米管系统中的平坦带是一种无分散的单粒子状态,具有不同的有效质量和几乎为零的组速度。这些平坦的频带有望在基态下支持外来特性,这对于广泛的有希望的物理现象可能很重要。对于许多应用,非常需要在狄拉克材料中拥有此类状态,但到目前为止,仅在非磁性狄拉克系统中进行了报道。在这项工作中,我们提出了实现由平面磁性拓扑绝缘子中域壁产生的拓扑保护的自旋偏置的平坦带。使用第一原理材料设计,我们建议一个内在的抗铁磁拓扑绝缘子家族,具有平面内sublattice磁化和较高的néel温度。这样的系统可以自然地托管域墙。对于这些材料,我们证明了在费米水平附近存在自旋极化的扁平带,并讨论了它们的特性和潜在应用。

A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have been reported only in non-magnetic Dirac systems. In this work we propose a realization of topologically protected spin-polarized flat bands generated by domain walls in planar magnetic topological insulators. Using first-principles material design we suggest a family of intrinsic antiferromagnetic topological insulators with an in-plane sublattice magnetization and a high Néel temperature. Such systems can host domain walls in a natural manner. For these materials, we demonstrate the existence of spin-polarized flat bands in the vicinity of the Fermi level and discuss their properties and potential applications.

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