论文标题
血浆硝酸钛通过原子层沉积：低温途径
Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route
论文作者
论文摘要
为了将等离子体设备整合到行业中，必须开发可扩展和CMOS兼容的等离子材料。在这项工作中，我们报告了血浆增强原子层沉积（PE-ald）在C-Plane Sapphire上的血浆质量质量硝酸钛（TIN）。通过探索化学吸附时间，底物温度和血浆暴露时间对材料特性的影响，可以在低于500°C的温度下实现低损失和高金属性的锡。减少化学吸附时间在T_S> 375°C处减轻过早的前体分解，以及在25S血浆暴露中实现了由等离子体轰击引起的杂质浓度降低与结构降解之间的权衡。在450°C的底物温度下生长的85 nm厚的锡膜，与CMOS过程兼容，具有0.5s的化学吸附时间和25S血浆暴露，表现出高等离子体的功绩（|ε^'/ε^''|），为2.8，电阻率为31μmmom。这些用亚波长孔孔制造的锡薄膜显示出非常出色的传播。
To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, substrate temperature and plasma exposure time on material properties. Reduction in chemisorption time mitigates premature precursor decomposition at T_S > 375°C , and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450°C, compatible with CMOS processes, with 0.5s chemisorption time and 25s plasma exposure exhibited a high plasmonic figure of merit (|ε^'/ε^''|) of 2.8 and resistivity of 31 μΩ-cm. These TiN thin films fabricated with subwavelength apertures were shown to exhibit extraordinary transmission.
