论文标题

超导Terahertz发射器中热点的片上感测

On-chip sensing of hotspots in superconducting terahertz emitters

论文作者

Zhou, Xianjing, Han, Xu, Koelle, Dieter, Kleiner, Reinhold, Zhang, Xufeng, Jin, Dafei

论文摘要

高温超导体BI2SR2CACU2O8中的内在约瑟夫森连接以其能力以广泛可调的频率发射高功率Terahertz光子而闻名。据信,热点是整个连接处的不均匀温度分布,在连接之间同步量规不变相位方面起着至关重要的作用,从而实现了相干的强发射。以前的光学成像技术间接地表明,热点温度可以高于超导体临界温度。但是,这种光学方法通常会干扰局部温度轮廓,并且对于设备应用而言太慢。在本文中,我们展示了一种原位感应技术,可以精确量化局部温度曲线。这是通过在“发射极”交界处制造一系列微型“传感器”连接来实现的,并测量传感器上的临界电流与应用于发射极的偏置电流。这种完全电子的片上设计可以使BSCCO连接中热点的有效近环控制,并显着增强超导Terahertz发射器的功能。

Intrinsic Josephson junctions in high-temperature superconductor Bi2Sr2CaCu2O8 are known for their capability to emit high-power terahertz photons with widely tunable frequencies. Hotspots, as inhomogeneous temperature distributions across the junctions, are believed to play a critical role in synchronizing the gauge-invariant phase difference among the junctions, so as to achieve coherent strong emission. Previous optical imaging techniques have indirectly suggested that the hotspot temperature can go higher than the superconductor critical temperature. However, such optical approaches often disturb the local temperature profile and are too slow for device applications. In this paper, we demonstrate an on-chip in situ sensing technique that can precisely quantify the local temperature profile. This is achieved by fabricating a series of micro "sensor" junctions on top of an "emitter" junction and measuring the critical current on the sensors versus the bias current applied to the emitter. This fully electronic on-chip design could enable efficient close-loop control of hotspots in BSCCO junctions and significantly enhance the functionality of superconducting terahertz emitters.

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