论文标题
P型铁磁半导体（GA，FE）SB中的配体$ p $ band和Fe-3 $ d $轨道之间的杂交
Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb
论文作者
论文摘要
（GA，FE）SB是实用的Spintronic设备应用的有前途的铁磁半导体，因为其库丽温度（$ t _ {\ rm c} $）高于室温。但是，具有高$ t _ {\ rm c} $的铁磁性的起源尚待阐明。在这里，我们使用软X射线角度分辨光谱光谱（SX-ARPES）来研究（ga $ _ {0.95} $，fe $ _ {0.05} $）SB的价频段（VB）结构，包括Fe-3 $ d $ d $ d $ d $ Inpurity band（ib），以揭开FERRERMAGNES的机械（IB）。我们发现（ga $ _ {0.95} $，fe $ _ {0.05} $）中的vb分散剂与SX-arpes观察到的SB类似于GASB的SB，这表明掺杂的Fe原子几乎不会影响频段分散体。 Fe-3 $ d $ resonant arpes Spectra表明，Fe-3 $ d $ ib穿过费米级别（$ e _ {\ rm f} $），并与燃气VB杂交。这些观察结果表明（ga $ _ {0.95} $，fe $ _ {0.05} $）SB的VB结构与IB模型的VB结构是一致的，IB模型基于本地化的3 $ d $ d $电子磁性杂质电子之间的双交换相互作用。结果表明，（GA，FE）SB中的铁磁磁性是由Fe-3 $ d $ ib与配体$ P $ p $ gasb的杂交形成的。
(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb.
