论文标题
II型Weyl半含量MOTE2薄膜的运输特性由化学蒸气沉积生长
Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition
论文作者
论文摘要
理论计算和实验观察结果表明，Mote2是II型Weyl半学，以及许多过渡金属二核苷元家族的成员。我们通过化学蒸气沉积在Si/SiO2底物上种植了高度结晶的大面积Mote2薄膜。通过扫描电子显微镜和原子力显微镜分析证实，获得了非常均匀，连续和光滑的膜。讨论了在不同温度下的纵向电阻率和电流特性的温度依赖性的测量。从10 K到200 K的未饱和，正二次磁化膜的阳性磁化剂已观察到。霍尔电阻率测量确认大多数荷载载流子是孔。
Theoretical calculations and experimental observations show MoTe2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2 substrates by chemical vapor deposition. Very uniform, continuous, and smooth films were obtained as confirmed by scanning electron microscopy and atomic force microscopy analyses. Measurements of the temperature dependence of longitudinal resistivity and current-voltage characteristics at different temperature are discussed. Unsaturated, positive quadratic magnetoresistance of the as-grown thin films has been observed from 10 K to 200 K. Hall resistivity measurements confirm the majority charge carriers are hole.
